document number: 94420 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 500 a vskt500-..pbf, vskh500-..pbf, vskl500-..pbf vishay semiconductors features ? high current capability ? high surge capability ? industrial standard package ? 3000 v rms isolating voltage with non-toxic substrate ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? motor starters ? dc motor controls - ac motor controls ? uninterruptable power supplies electrical specifications product summary i t(av) , i f(av) 500 a super magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) , i f(av) 82 c 500 a i t(rms) 785 a t c 82 c i tsm 50 hz 17.8 ka 60 hz 18.7 i 2 t 50 hz 1591 ka 2 s 60 hz 1452 i 2 ? t 15 910 ka 2 ? s v rrm range 800 to 1600 v t stg range - 40 to 150 c t j range - 40 to 130 voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = t j maximum ma vsk.500 08 800 900 100 12 1200 1300 14 1400 1500 16 1600 1700
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94420 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 500 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av), i f(av) 180 conduction, half sine wave 500 a 82 c maximum rms on-state current i t(rms) 180 conduction, half sine wave at t c = 82 c 785 a maximum peak, one-cycle, non-repetitive on-s tate surge current i tsm, i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 17.8 ka t = 8.3 ms 18.7 t = 10 ms 100 % v rrm reapplied 15.0 t = 8.3 ms 15.7 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1591 ka 2 s t = 8.3 ms 1452 t = 10 ms 100 % v rrm reapplied 1125 t = 8.3 ms 1027 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.85 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.93 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.36 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.32 maximum on-state voltage drop v tm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.50 v maximum forward voltage drop v fm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.50 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 500 ma maximum latching current i l 1000 switching parameter symbol test conditions values units maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, v drm applied 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 750 a; t j = t j maximum, di/dt = - 60 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 130 c, linear to v d = 80 % v drm 1000 v/s rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 100 ma
document number: 94420 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 500 a vishay semiconductors note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum peak average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current +i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 5.0 maximum dc gate current required to trigger i gt t j = 25 c, v ak 12 v 200 ma dc gate voltage required to trigger v gt 3.0 v dc gate current not to trigger i gd t j = t j maximum 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 130 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.065 k/w maximum thermal resistance, case to heatsink r thc-hs 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be re checked after a period of 3 hours to allow for the spread of the compound. 6 to 8 nm busbar to smap 12 to 15 approximate weight 1500 g case style see dimensions - link at the end of datasheet super magn-a-pak ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = t j maximum k/w 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94420 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 500 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle vsk.500.. series r (dc) = 0.065 k/ w thjc 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 900 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period vsk.500.. series r (dc) = 0.065 k/ w thjc 0 100 200 300 400 500 600 700 0 100 200 300 400 500 rm s li m i t conduc tion angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) vsk.500.. series pe r ju nc t io n t = 1 3 0 c j 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) vsk.500.. series pe r ju n c t i o n t = 1 3 0 c j 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 110100 numbe r of equa l amp lit ude half cyc le current pulses (n) peak half sine wave on-sta te current (a) init ia l t = 130c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with ra ted v ap p lied fo llowing surg e . rrm vsk.500.. se ries pe r ju n c t i o n 6000 8000 10000 12000 14000 16000 18000 0.01 0.1 1 peak half sine wave on-state current (a) pu lse t ra in dura tion (s) ma ximum non rep etitive surge current versus pulse tra in dura tion. control of conduction may not be maintained. init ia l t = 130c no volta g e rea p plied ra t e d v re a p p l i e d rrm j vsk.500.. series pe r ju n c t i o n
document number: 94420 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 500 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 7 k / w - d e l t a r 0 . 0 9 k / w 0 . 1 2 k / w 0 .1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w t h s a 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 0 100 200 300 400 500 600 700 800 180 120 90 60 30 to t a l rm s o u t p u t c u r r e n t ( a ) maximum total on-state power loss (w) cond uction angle vsk.500.. se rie s pe r m o d u le t = 130c j 020406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w t h s a 0 500 1000 1500 2000 2500 3000 0 200 400 600 800 1000 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vsk.500.. se rie s si n g l e ph a se br i d g e connected t = 130c j 0 20406080100120 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 0 8k / w 0 . 2 k / w t h s a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 250 500 750 1000 1250 1500 total output current (a) maximum total power loss (w) 120 (rect) 3 x vsk.500.. se rie s th r e e ph a se br i d g e connected t = 1 3 0 c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94420 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 02-jul-10 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf vishay semiconductors thyristor/diode and thyristor/thyristor (super magn-a-pak po wer modules), 500 a fig. 10 - on-state voltage drop characteristics fig. 11 - thermal impedance z thjc characteristics fig. 12 - gate characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 1 3 0 c j vsk.500.. se rie s pe r ju n c t io n 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc tr a n si e n t t hermal impedance z (k/w) vsk.500.. series pe r ju n c t i o n st e a d y st a t e v a l u e : r = 0.065 k/ w (dc operation) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj =2 5 c tj = - 4 0 c (2) (3) in st a n t a n e o u s g a t e c u r r e n t ( a ) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, t p = 4ms (2) pgm = 20w, t p = 2ms (3) pgm = 40w, t p = 1ms (4) pgm = 60w, tp = 0.66ms rectangular gate pulse tj = 1 3 0 c vsk.500.. series frequency limited by pg(av) (4) 1 - module type 2 - circuit configuration (see end of datasheet) 3 - current rating 4 - voltage code x 100 = v rrm (see voltage ratings table) 5 - lead (pb)-free device code 5 13 24 vsk t 500 - 16 pbf
document number: 94420 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 02-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vskt500-..pbf, vskh500-..pbf, vskl500-..pbf thyristor/diode and thyristor/thyristor (super magn-a-pak power modules), 500 a vishay semiconductors circuit configuration links to related documents dimensions www.vishay.com/doc?95283 vskt + 6 (g2) - 5 (g1) ~ 1 2 3 7 (k2) 4 (k1) vskl + 6 (g2) - ~ 1 2 3 7 (k2) vskh + - 5 (g1) ~ 1 2 3 4 (k1)
document number: 95283 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 20-mar-08 1 super magn-a-pak thyristor/diode outline dimensions vishay semiconductors dimensions in millimeters (inches) 52 (2.05) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 20.1 (0.78) 36.4 (1.14) 4.5 (0.20) 54 6 5, 6 = gate 4, 7 = cathode 7 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.
|
